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symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol v ds i dm t j , t stg -30 20 gate-source voltage a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 7.5 6 30 2.5 1.6 -5.3 -6.6 2.5 1.6 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -30 20 drain-source voltage t a =70c power dissipation t a =25c p d units v junction and storage temperature range -55 to 150 -55 to 150 parameter maximum schottky reverse voltage 30 a t a =70c 2.7 pulsed forward current b 20 continuous forward current a t a =25c i d 4 w t a =70c 1.6 junction and storage temperature range -55 to 150 c power dissipation a t a =25c p d 2.5 AOP604 features n-channel p-channel v ds (v) = 30v -30v i d = 7.5a -6.6a r ds(on) < 28m ? < 35m ? (v gs = 10v) < 43m ? < 58m ? (v gs = 4.5v) schottky v ds =30v, i f =3a, v f <0.5v@1a general description the AOP604 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. a schottky diode in parallel with the n-channel fet reduces body diode related losses. d2 g2 s2 g1 d1 s1 k a g1 s1/a g2 s2 d1/k d1/k d2 d2 1 2 3 4 8 7 6 5 n-ch p-ch pdip-8 complementary enhancement mode field effect transistor www.freescale.net.cn 1 / 11
aop60 4 symbol ty p max 40 50 67 80 r jl 33 40 symbol ty p max 38 50 66 80 r jl 30 40 symbol ty p max 42 50 70 80 r jl 34 40 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w maximum junction-to-lead c steady-state c/w thermal characteristics: schottky parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w thermal characteristics: n-channel thermal characteristics: p-channel maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 11
AOP604 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 22.6 28 t j =125c 33 43 m ? g fs 12 16 s v i s 4a c iss 680 pf c oss 102 pf c rss 77 pf r g 3 ? q g (10v) 13.84 nc q g 6.74 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 ns q rr 7.8 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf ma junction capacitance v r =15v turn-off fall time body diode reverse recovery time body diode reverse recovery charge i f =7.5a, di/dt=100a/ s v r =30v, t j =150c i f =1.0a forward voltage drop i rm maximum reverse leakage current v r =30v v r =30v, t j =125c 0.45 0.5 v gs =0v, v ds =15v, f=1mhz i f =7.5a, di/dt=100a/ s v gs =4.5v, v ds =15v, i d =7.5a v gs =10v, v ds =15v, r l =2.0 ? , r gen =6 ? schottky+ body diode forward voltage i s =1a reverse transfer capacitance turn-on delaytime turn-on rise time gate resistance v gs =0v, v ds =0v, f=1mhz input capacitance turn-off delaytime switching parameters total gate charge total gate charge gate source charge gate drain charge output capacitance. (schottky+fet) r ds(on) static drain-source on-resistance v gs =10v, i d =7.5a forward transconductance v ds =5v, i d =7.5a maximum body-diode+schottky continuous current dynamic parameters v sd m ? v gs =4.5v, i d =6.0a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs =20v n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 3 / 11
aop60 4 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 30 a 28 35 t j =125c 37 45 44 58 m ? g fs 13 s v sd -0.76 -1 v i s -4.2 a c iss 920 pf c oss 190 pf c rss 122 pf r g 3.6 ? q g (10v) 18.5 nc q g (4.5v) 9.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 ns t r 5.7 ns t d(off) 20.2 ns t f 9.5 ns t rr 20 ns q rr 8.8 nc p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-5a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-6.6a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-6.6a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6.6a turn-on delaytime v gs =-10v, v ds =-15v, r l =2.3 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-6.6a, di/dt=100a/ s body diode reverse recovery charge i f =-6.6a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 4 / 11
aop60 4 typical electrical and thermal characteristics: n-channel 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5 v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics mosfet+schottky i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 c v ds =5v v gs =4.5 v v gs =10v i d =7.5a 125c 25c 25c i d =7.5a 5 v 6 v www.freescale.net.cn 5 / 11
aop60 4 typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 02468101214 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss (fet+schottky) c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0 .1 s 1s 10s d c r ds(on) limite d t j(max) =150c t a =25c v ds =15v i d =7.5a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 p s www.freescale.net.cn 6 / 11
aop60 4 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 25 30 35 40 45 50 55 60 65 70 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6.6a 25c 125c i d =-6.6a -4.5v -5v www.freescale.net.cn 7 / 11
aop60 4 typical electrical and thermal characteristics 0 2 4 6 8 10 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0.1s 1s 1 0s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-15v i d =-6.6a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s www.freescale.net.cn 8 / 11
aop60 4 typical electrical and thermal characteristics: schottky 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /(t on +t off ) t j,pk =t a +p dm .z ja .r ja r ja =50c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t off p d www.freescale.net.cn 9 / 11
pdip-8 (300) package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.100 mm (4 mil) unless otherwise specified 3. coplanarity : 0.1000 mm 4. dimension l is measured in gage plane package marking description note: lg - aos logo partn - part number code. f - fab location a - assembly location y - year code w - week code. l n - assembly lot code pdip-8 part no. code part no. AOP604 code p604 code part no. code part no. www.freescale.net.cn 10 / 11
pdip-8 (300) tube data pdip-8 tube www.freescale.net.cn 11 / 11

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